n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser
نویسندگان
چکیده
منابع مشابه
Temperature Effect on THz Quantum Cascade Lasers
A simple semi-phenomenological model, which accurately predicts the dependence of thresholdcurrent for temperature of Resonant-phonon three well quantum cascade laser based on verticaltransitions is offered. We found that, the longitude optical phonon scattering of thermally excitedelectrons is the most important limiting factor for thermal performance of high frequency THz QCLs.In low frequenc...
متن کاملDesign Optimization for 4.1-THZ Quantum Cascade Lasers
We present an optimized design for GaAs/AlGaAs quantum cascade lasers operating at 4.1THz. This was based on a three-well active module with diagonal radiative transition. This was performed by modifying the existing model structure, to reduce the parasitic anticrossings (leakage currents) as well as the optical gain linewidth. While the gain FWHM was reduced by more than 50% the gain pea...
متن کاملtemperature effect on thz quantum cascade lasers
a simple semi-phenomenological model, which accurately predicts the dependence of thresholdcurrent for temperature of resonant-phonon three well quantum cascade laser based on verticaltransitions is offered. we found that, the longitude optical phonon scattering of thermally excitedelectrons is the most important limiting factor for thermal performance of high frequency thz qcls.in low frequenc...
متن کاملFrequency modulation spectroscopy with a THz quantum-cascade laser.
We report on a terahertz spectrometer for high-resolution molecular spectroscopy based on a quantum-cascade laser. High-frequency modulation (up to 50 MHz) of the laser driving current produces a simultaneous modulation of the frequency and amplitude of the laser output. The modulation generates sidebands, which are symmetrically positioned with respect to the laser carrier frequency. The molec...
متن کاملn-Si/SiGe quantum cascade structures for THz emission
In this work we report on modelling the electron transport in n-Si/SiGe structures. The electronic structure is calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization. The transport is described via scattering between quantized states, using th...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ECS Transactions
سال: 2019
ISSN: 1938-6737,1938-5862
DOI: 10.1149/09301.0063ecst